Defect Profile Induced by Friction and Wear Processes Detected by Positron Annihilation Method
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چکیده
منابع مشابه
Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO(2)/Si interface in the UTB-SOI was well characterized, and a good estimation of...
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Rights: © 2013 American Physical Society (APS). This is the accepted version of the following article: Tuomisto, Filip & Makkonen, Ilja. 2013. Defect identification in semiconductors with positron annihilation: Experiment and theory. Reviews of Modern Physics. Volume 85, Issue 4. 1583-1631. ISSN 0034-6861 (printed). DOI: 10.1103/revmodphys.85.1583, which has been published in final form at http...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1995
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.88.129